The structural and electrochemical properties of tin oxide films prepared by RF magnetron sputtering

被引：0
|
作者：
Cai, Minzhen [1 ]
Song, Jie [2 ]
Zhang, Liangtang [3 ]
Wu, Qihui [1 ]
Wu, Suntao [4 ]
机构：
[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Sch Chem & Chem Engn, Xiamen 361005, Peoples R China
[3] Xiamen Univ, Dept Mech & Elect Engn, Xiamen 361005, Peoples R China
[4] Xiamen Univ, Pen Tung Sah MEMS Res Ctr, Xiamen 361005, Peoples R China
来源：
THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE | 2008年 / 6984卷
关键词：
tin oxide films; anode material; RF magnetron sputtering; electrochemical property;
D O I：
10.1117/12.792136
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Tin oxide thin films have been deposited on oxide silicon substrates using a RF magnetron sputtering process with various sputtering power. The crystal structures of the tin oxide thin films were characterized and analyzed by X-ray diffraction. The surface morphology of the films were observed by SEM. The electrochemical properties of the films were also tested by constant current charge and discharge cycle tests. The results of XRD indicate that all the films are crystalline. The results of SEM exhibit that the grain size of surface expands as sputtering power rises.
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页数：4
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