INFRARED LINEAR IMAGE SENSOR USING A POLY-SI PN JUNCTION DIODE-ARRAY

被引：4

作者：

TANAKA, A ^{[1
]}

SUZUKI, M ^{[1
]}

ASAHI, R ^{[1
]}

TABATA, O ^{[1
]}

SUGIYAMA, S ^{[1
]}

机构：

[1] TOYOTA CENT R&D LABS INC,NAGAKUTE,AICHI 48011,JAPAN

来源：

INFRARED PHYSICS | 1992年 / 33卷 / 04期

关键词：

D O I：

10.1016/0020-0891(92)90019-P

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An IR linear image sensor using a poly-Si pn junction diode array has been developed. The poly-Si pn junction diode detector is supported on a thin insulating membrane formed using anisotropic etching and a sacrificial poly-Si etching settler. The fabrication of this linear image sensor allows compatible integration of both IR detectors and conventional Si-IC processes. This sensor consists of 16 bit elements, each of 400-mu-m x 400-mu-m dimensions, and overall area 10.0 x 2.5 mm2. We obtained, at room temperature, the values Rv = 50 V/W and D* = 6.0 x 10(5) cm Hz1/2/W.

引用

页码：229 / 236

页数：8

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