INFRARED LINEAR IMAGE SENSOR USING A POLY-SI PN JUNCTION DIODE-ARRAY

被引：4
|
作者：
TANAKA, A [1 ]
SUZUKI, M [1 ]
ASAHI, R [1 ]
TABATA, O [1 ]
SUGIYAMA, S [1 ]
机构：
[1] TOYOTA CENT R&D LABS INC,NAGAKUTE,AICHI 48011,JAPAN
来源：
INFRARED PHYSICS | 1992年 / 33卷 / 04期
关键词：
D O I：
10.1016/0020-0891(92)90019-P
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An IR linear image sensor using a poly-Si pn junction diode array has been developed. The poly-Si pn junction diode detector is supported on a thin insulating membrane formed using anisotropic etching and a sacrificial poly-Si etching settler. The fabrication of this linear image sensor allows compatible integration of both IR detectors and conventional Si-IC processes. This sensor consists of 16 bit elements, each of 400-mu-m x 400-mu-m dimensions, and overall area 10.0 x 2.5 mm2. We obtained, at room temperature, the values Rv = 50 V/W and D* = 6.0 x 10(5) cm Hz1/2/W.
引用
收藏
页码：229 / 236
页数：8
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