Thermal imaging camera with linear Pb1-xSnxSe-on-Si infrared sensor array and combined JFET/CMOS read-out electronics

被引：0

|

作者：

Masek, J. ^{[1
]}

Fach, A. ^{[1
]}

John, J. ^{[1
]}

Muller, P. ^{[1
]}

Paglino, C. ^{[1
]}

Zogg, H. ^{[1
]}

Buttler, W. ^{[1
]}

机构：

[1] Swiss Federal Inst of Technology, Zurich, Switzerland

来源：

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1996年 / 377卷 / 2-3期

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页码：496 / 500

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[1] Thermal imaging camera with linear Pb1-xSnxSe-on-Si infrared sensor array and combined JFET/CMOS read-out electronics
Masek, J
Fach, A
John, J
Muller, P
Paglino, C
Zogg, H
Buttler, W
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 377 (2-3): : 496 - 500
[2] Pb1-xSnxSe-on-Si LWIR sensor arrays and thermal imaging with JFET/CMOS read-out
Zogg, H
Fach, A
John, J
Masek, J
Muller, P
Paglino, C
Buttler, W
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (08) : 1366 - 1370
[3] Photovoltaic Pb1-xSnxSe-on-Si IR-sensor arrays for thermal imaging
Zogg, H.
Fach, A.
John, J.
Masek, J.
Wissenschaftlinche Zeitschrift der Technischen Universitat Dresden, 1994, 43 (06):
[4] IR-sensor array fabrication in Pb1-xSnxSe-on-Si heterostructures
John, J
Fach, A
Masek, J
Muller, P
Paglino, C
Zogg, H
APPLIED SURFACE SCIENCE, 1996, 102 : 346 - 349
[5] HETEROEPITAXIAL PB1-XSNXSE ON SI INFRARED-SENSOR ARRAY WITH 12-MU-M CUTOFF WAVELENGTH
ZOGG, H
MAISSEN, C
MASEK, J
BLUNIER, S
LAMBRECHT, A
TACKE, M
APPLIED PHYSICS LETTERS, 1989, 55 (10) : 969 - 971
[6] MONOLITHIC INFRARED-SENSOR ARRAY IN HETEROEPITAXIAL PB1-XSNXSE ON SI WITH 12-MU-M CUTOFF WAVELENGTH
MAISSEN, C
ZOGG, H
MASEK, J
BLUNIER, S
LAMBRECHT, A
BOTTNER, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2627 - 2627