DISTRIBUTED CHANNEL MODEL FOR HEMT SIGNAL AND NOISE PARAMETERS

被引：0

作者：

GARDNER, P

PAUL, DK

机构：

[1] Department of Electrical Engineering & Electronics, UMIST, Manchester M60 1QD

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 22期

关键词：

NOISE; MODELING; EQUIVALENT CIRCUITS;

D O I：

10.1049/el:19921322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new simple model for the signal and noise properties of a microwave FET or HEMT avoids the need for any explicit correlation between gate and drain noise sources by distributing the drain-to-gate capacitance and the drain noise source along the conducting channel. The new model applied to a commercial HEMT chip demonstrates a very good fit to measured scattering and noise parameter data.

引用

页码：2063 / 2064

页数：2

共 50 条

[41] CALCULATION OF PARAMETERS OF A DISCRETE MODEL OF A CHANNEL WITH FADING AND EVALUATION OF NOISE-IMMUNITY
GUT, RE
MINEVICH, ML
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1974, 28 (12) : 75 - 81
[42] Geometric model of human factor parameters for channel identification for active noise control
Wang S.
Xu J.
Gao Y.
Li C.
Lin Q.
Gao D.
Zhang J.
Jin B.
Shengxue Xuebao/Acta Acustica, 2024, 49 (02): : 226 - 237
[43] Large signal and noise modeling of HEMT devices including frequency and temperature effects
Sinnesbichler, F
Felgentreff, T
Olbrich, GR
27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 428 - 431
[44] CALCULATION OF THE PARAMETERS OF A DISCRETE MODEL OF A CHANNEL WITH FADING AND EVALUATION OF THE NOISE IMMUNITY.
Gut, R.E.
Minevich, M.L.
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1974, 28-29 (12): : 75 - 81
[45] SIGNAL PARAMETER OPTIMIZATION FOR THE IMPULSIVE NOISE CHANNEL
VANELLI, JC
SHEHADEH, NM
IEEE TRANSACTIONS ON COMMUNICATIONS, 1980, 28 (03) : 379 - 385
[46] Ion channel mutations in AF: Signal or noise?
Ellinor, Patrick T.
MacRae, Caum A.
HEART RHYTHM, 2008, 5 (03) : 436 - 437
[47] A NOISE MODEL FOR DISTRIBUTED TRANSISTOR
PATTERSON, JD
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (02) : 75 - +
[48] Genetic algorithm for optimization of HEMT model parasitic parameters
Phuong, Phan Hong
Thanh, Tong Duc
2008 SECOND INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND ELECTRONICS, 2008, : 351 - 355
[49] A low noise composite-channel metamorphic HEMT for wireless communication applications
Lu, CY
Chen, KS
Lee, HM
Chang, EY
Chen, SH
Lin, YC
Chen, GJ
EDMO2003: 11TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2003, : 87 - 92
[50] Closed-Form Extraction Strategy of Physically Meaningful Parameters of Small-Signal HEMT Models With Distributed Parasitic Capacitive Effects
Flores, Jaime Alberto Zamudio
Kompa, Guenter
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2021, 69 (02) : 1227 - 1237

← 1 2 3 4 5 →