DISTRIBUTED CHANNEL MODEL FOR HEMT SIGNAL AND NOISE PARAMETERS

被引：0
|
作者：
GARDNER, P
PAUL, DK
机构：
[1] Department of Electrical Engineering & Electronics, UMIST, Manchester M60 1QD
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 22期
关键词：
NOISE; MODELING; EQUIVALENT CIRCUITS;
D O I：
10.1049/el:19921322
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new simple model for the signal and noise properties of a microwave FET or HEMT avoids the need for any explicit correlation between gate and drain noise sources by distributing the drain-to-gate capacitance and the drain noise source along the conducting channel. The new model applied to a commercial HEMT chip demonstrates a very good fit to measured scattering and noise parameter data.
引用
收藏
页码：2063 / 2064
页数：2
相关论文
共 50 条
  • [31] An improved HEMT noise model for optical preamplifier design
    Gao, JJ
    Gao, BX
    Liang, CG
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2001, 28 (01) : 26 - 28
  • [32] Estimation of random signal parameters with a noise with unknown parameters
    Trifonov, AP
    Glaznev, AA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 2002, 45 (9-10): : A3 - A18
  • [33] Genetic determination of large-signal HEMT model
    Shirakawa, K
    Okubo, N
    27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 432 - 436
  • [34] Analytical modeling of MOSFETs channel noise and noise parameters
    Asgaran, S
    Deen, MJ
    Chen, CH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) : 2109 - 2114
  • [35] A new empirical large-signal HEMT model
    Shirakawa, K
    Shimizu, M
    Kawasaki, Y
    Ohashi, Y
    Okubo, N
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (04) : 622 - 624
  • [36] OPTIMAL RECURRENT EVALUATION OF AN AMPLITUDE OF A MANIPULATED RADIOTELEGRAPH SIGNAL IN A CHANNEL WITH VARIABLE PARAMETERS AND FLUCTUATING NOISE
    SHAROV, AN
    GROSHIKOV, EN
    KOVESHNIKOV, VG
    RADIOTEKHNIKA I ELEKTRONIKA, 1981, 26 (08): : 1644 - 1653
  • [37] Signal and noise improvement of a distributed FET mixer
    Moradi, G
    Abdipour, A
    Farzaneh, F
    EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2002, : 284 - 288
  • [38] Signal-to-noise ratios of the myoelectric channel with additive noise
    Zhang, YT
    Parker, PA
    Scott, RN
    PROCEEDINGS OF THE 19TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE AND BIOLOGY SOCIETY, VOL 19, PTS 1-6: MAGNIFICENT MILESTONES AND EMERGING OPPORTUNITIES IN MEDICAL ENGINEERING, 1997, 19 : 1582 - 1584
  • [39] THE INFLUENCE OF DEVICE PHYSICAL PARAMETERS ON HEMT LARGE-SIGNAL CHARACTERISTICS
    WEISS, M
    PAVLIDIS, D
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (02) : 239 - 249
  • [40] A novel intrinsic-parameters-correlation enhancement technology applied to accurately extract GaN HEMT small-signal model parameters
    Zhang, Jincan
    Cai, Haiyi
    Wang, Shaowei
    Liu, Min
    INTEGRATION-THE VLSI JOURNAL, 2025, 103
12345