Closed-Form Extraction Strategy of Physically Meaningful Parameters of Small-Signal HEMT Models With Distributed Parasitic Capacitive Effects

In this article, closed-form physically consistent parameter extractions are presented for small-signal models with parasitic distributed capacitive effects. First, the effective gate-source, drain-source, and gate-drain capacitances of the device are obtained and partitioned into distributed capacitive elements. With the distributed capacitive network known, a novel closed-form inductance extraction is presented, and an original series-resistance extraction is also proposed, which takes into account the distributed nature of the parasitic capacitive effects in the device model. The proposed extraction strategy has been applied to a 1.2-mm GaN HEMT and an uncertainty analysis has been performed on the basis of artificial and real S-parameters, applying the measurement uncertainty model of a commercial vector network analyzer.