SURFACTANTS IN EPITAXIAL-GROWTH

被引:1051
|
作者
COPEL, M
REUTER, MC
KAXIRAS, E
TROMP, RM
机构
关键词
D O I
10.1103/PhysRevLett.63.632
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:632 / 635
页数:4
相关论文
共 50 条
  • [21] SELECTIVE EPITAXIAL-GROWTH OF SILICON
    OSENBACH, JW
    SCHIMMEL, DG
    FEYGENSON, A
    BASTEK, JJ
    TSAI, JCC
    PRAEFCKE, HC
    BONATO, EW
    [J]. JOURNAL OF MATERIALS RESEARCH, 1991, 6 (11) : 2318 - 2323
  • [22] EPITAXIAL-GROWTH OF TELLURIUM BY ELECTRODEPOSITION
    QIU, CX
    SHIH, I
    [J]. MATERIALS LETTERS, 1989, 8 (08) : 309 - 312
  • [23] EQUATIONS OF MOTION FOR EPITAXIAL-GROWTH
    ZANGWILL, A
    LUSE, CN
    VVEDENSKY, DD
    WILBY, MR
    [J]. SURFACE SCIENCE, 1992, 274 (02) : L529 - L534
  • [24] EPITAXIAL-GROWTH OF DOLOMITE ON MICA
    TOMAN, K
    TAYLOR, PR
    [J]. AMERICAN MINERALOGIST, 1974, 59 (7-8) : 871 - 872
  • [25] EPITAXIAL-GROWTH OF ZNSE ON GE
    MUTSUKURA, N
    OHKODA, T
    MACHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 999 - 1000
  • [26] EPITAXIAL-GROWTH OF COTE FILMS
    GOSWAMI, A
    SINGH, P
    [J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1973, 11 (05) : 373 - 374
  • [27] EPITAXIAL-GROWTH OF INDIUM NITRIDE
    WAKAHARA, A
    TSUCHIYA, T
    YOSHIDA, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 385 - 389
  • [28] KINETICS OF EPITAXIAL-GROWTH AND ROUGHENING
    FAMILY, F
    AMAR, JG
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 30 (2-3): : 149 - 166
  • [29] NEW SLANT ON EPITAXIAL-GROWTH
    VVEDENSKY, D
    [J]. PHYSICS WORLD, 1994, 7 (03) : 30 - 31
  • [30] EPITAXIAL-GROWTH ON SIMOX WAFERS
    LAM, HW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C95 - C95