EPITAXIAL-GROWTH OF TELLURIUM BY ELECTRODEPOSITION

被引：6

作者：

QIU, CX

SHIH, I

机构：

来源：

关键词：

D O I：

10.1016/0167-577X(89)90173-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：309 / 312

页数：4

共 50 条

[1] SILICON EPITAXIAL-GROWTH BY ELECTRODEPOSITION FROM MOLTEN FLUORIDES
COHEN, U
HUGGINS, RA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) : 381 - 383
[2] PREPARATION OF SINGLE-CRYSTAL TELLURIUM FILMS BY EPITAXIAL-GROWTH ON SELENIUM
BAMMES, P
OTTO, A
PETRI, E
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (02): : 365 - &
[3] ON THE THEORY OF EPITAXIAL-GROWTH
STOYANOV, S
[J]. SURFACE SCIENCE, 1986, 172 (01) : 198 - 210
[4] SILICON EPITAXIAL-GROWTH
NISHIZAWA, JI
TERASAKI, T
SHIMBO, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 241 - +
[5] SURFACTANTS IN EPITAXIAL-GROWTH
COPEL, M
REUTER, MC
KAXIRAS, E
TROMP, RM
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (06) : 632 - 635
[6] EPITAXIAL-GROWTH OF FERRITE
GIBART, P
ROBBINS, M
KANE, AB
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 166 - 171
[7] EPITAXIAL-GROWTH OF POLYDIACETYLENES
RICKERT, SE
LANDO, JB
CHING, S
[J]. ACS SYMPOSIUM SERIES, 1983, 233 : 229 - 233
[8] SELECTIVE EPITAXIAL-GROWTH
SHAW, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C261 - C261
[9] MECHANISMS OF EPITAXIAL-GROWTH
MARKOV, I
STOYANOV, S
[J]. CONTEMPORARY PHYSICS, 1987, 28 (03) : 267 - 320
[10] MODELING OF EPITAXIAL-GROWTH
GILMER, GH
GRABOW, MH
BAKKER, AF
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 6 (2-3): : 101 - 112