EPITAXIAL-GROWTH OF INDIUM NITRIDE

Epitaxial layers of InN films were grown onto (0001) α-Al2O3 substrates in the temperature range of 400-600°C by microwave-excited metalorganic vapor phase epitaxy (MOVPE) using (CH3)3In and nitrogen. Trimethylindium was decomposed by microwave-excited nitrogen, and the existence of atomic indium was confirmed from the luminescence lines. The growth rate of the InN films was independent of the substrate temperature at relatively high microwave power ( > 100 W). Specular surfaces were obtained at low substrate temperatures ( < 500°C). From reflection high-energy electron diffraction analysis, the deposited films were found to be crystalline InN with an orientation relation of (0001) InN//(0001) α-Al2O3. The stoichiometry of the grown films was similar to that reported for bulk InN from electron spectroscopy for chemical analysis. © 1990.