DETERMINATION OF THICKNESS AND REFRACTIVE-INDEX OF SIO2-FILMS ON SILICON-WAFERS USING AN ABBE REFRACTOMETER

被引：11
|
作者：
LUKOSZ, W
PLISKA, P
机构：
[1] Optics Laboratory, Swiss Federal Institute of Technology Zürich
来源：
OPTICS COMMUNICATIONS | 1991年 / 85卷 / 5-6期
关键词：
D O I：
10.1016/0030-4018(91)90567-W
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have demonstrated a simple yet accurate method determining the thickness and refractive index of SiO2 films on silicon substrates. The method requires only an Abbe refractometer which is used without any modification.
引用
收藏
页码：381 / 384
页数：4
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