GROWTH-KINETICS OF EPITAXIAL LAYERS OF SILICON-CARBIDE OBTAINED BY SUBLIMATION IN VACUUM

被引：0
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作者：
TAIROV, YM
TARANETS, VA
TSVETKOV, VF
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来源：
INORGANIC MATERIALS | 1978年 / 14卷 / 08期
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T [工业技术];
学科分类号：
08 ;
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页码：1122 / 1125
页数：4
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