A simple model for calculating the growth rate of epitaxial layers of silicon carbide in vacuum

被引：2
|
作者：
Davydov, SY
Lebedev, AA
Savkina, NS
Syvajarvi, M
Yakimova, R
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Linkoping Univ, S-58183 Linkoping, Sweden
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 02期
关键词：
D O I：
10.1134/1.1648365
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The temperature dependence of the growth rate of epitaxial layers of silicon carbide in vacuum was calculated within the simple model based on the Hertz-Knudsen equation, taking into account the temperature-dependent sticking coefficient. The calculation results fit the experimental data well. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：150 / 152
页数：3
相关论文
共 50 条
  • [1] Setup parameters controlling the growth rate of silicon carbide epitaxial layers in a vacuum
    Davydov, SY
    Lebedev, AA
    Savkina, NS
    Volkova, AA
    [J]. TECHNICAL PHYSICS, 2005, 50 (04) : 503 - 507
  • [2] Setup parameters controlling the growth rate of silicon carbide epitaxial layers in a vacuum
    S. Yu. Davydov
    A. A. Lebedev
    N. S. Savkina
    A. A. Volkova
    [J]. Technical Physics, 2005, 50 : 503 - 507
  • [3] Simple model for calculation of SiC epitaxial layers growth rate in vacuum.
    Davydov, SY
    Savkina, NS
    Lebedev, AA
    Syvajarvi, M
    Yakimova, R
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 249 - 252
  • [4] GROWTH-KINETICS OF EPITAXIAL LAYERS OF SILICON-CARBIDE OBTAINED BY SUBLIMATION IN VACUUM
    TAIROV, YM
    TARANETS, VA
    TSVETKOV, VF
    [J]. INORGANIC MATERIALS, 1978, 14 (08) : 1122 - 1125
  • [5] Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
    Danielsson, Ö
    Henry, A
    Janzén, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 243 (01) : 170 - 184
  • [6] Vapour phase growth of epitaxial silicon carbide layers
    Wagner, G
    Schulz, D
    Siche, D
    [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2003, 47 (2-3) : 139 - 165
  • [7] KINETIC CHARACTERISTICS AND MECHANISM OF GROWTH OF EPITAXIAL SILICON-CARBIDE LAYERS OBTAINED BY DIRECT SYNTHESIS IN VACUUM
    TAIROV, YM
    TARANETS, VA
    TSVETKOV, VF
    [J]. INORGANIC MATERIALS, 1979, 15 (01) : 4 - 7
  • [8] Vacancy model of micropipe annihilation in epitaxial silicon carbide layers
    S. Yu. Davydov
    A. A. Lebedev
    [J]. Semiconductors, 2011, 45
  • [9] Vacancy Model of Micropipe Annihilation in Epitaxial Silicon Carbide Layers
    Davydov, S. Yu.
    Lebedev, A. A.
    [J]. SEMICONDUCTORS, 2011, 45 (06) : 727 - 730
  • [10] GROWTH OF EPITAXIAL LAYERS OF GALLIUM NITRIDE ON SILICON CARBIDE AND CORUNDUM SUBSTRATES
    WICKENDEN, DK
    FAULKNER, KR
    BRANDER, RW
    ISHERWOO.J
    [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 158 - +
12345