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- [1] EPITAXIAL-GROWTH OF SILICON-CARBIDE LAYERS BY SUBLIMATION SANDWICH METHOD .1. GROWTH-KINETICS IN VACUUM[J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (06): : 729 - 740VODAKOV, YAMOKHOV, ENRAMM, MGROENKOV, AD
- [2] GROWTH-KINETICS, SOLUBILITY, AND POLYTYPY OF PHOSPHORUS-DOPED EPITAXIAL LAYERS OF SILICON-CARBIDE[J]. INORGANIC MATERIALS, 1981, 17 (02) : 180 - 183MOKHOV, ENUSMANOVA, MMYULDASHEV, GFMAKHMUDOV, BS
- [3] GROWTH-KINETICS OF SILICON-CARBIDE CVD[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) : 599 - 604KANEKO, TOKUNO, TYUMOTO, H
- [4] KINETIC CHARACTERISTICS AND MECHANISM OF GROWTH OF EPITAXIAL SILICON-CARBIDE LAYERS OBTAINED BY DIRECT SYNTHESIS IN VACUUM[J]. INORGANIC MATERIALS, 1979, 15 (01) : 4 - 7TAIROV, YMTARANETS, VATSVETKOV, VF
- [5] GALLIUM-DOPED EPITAXIAL LAYERS OF SILICON OBTAINED BY SUBLIMATION IN A VACUUM[J]. INORGANIC MATERIALS, 1982, 18 (01) : 1 - 3GUGIN, VAPOSTNIKOV, VVKOMRAKOVA, TDRUBTSOVA, RA
- [6] POLYTYPISM OF EPITAXIAL LAYERS OF SILICON-CARBIDE[J]. KRISTALLOGRAFIYA, 1976, 21 (06): : 1222 - 1223SAFARALIYEV, GKTAIROV, YMTSVETKOV, VF
- [7] STUDY OF GROWTH-CONDITIONS OF SILICON-CARBIDE EPITAXIAL LAYERS[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (04) : 519 - 522SAIDOV, MSSHAMURATOV, KAKADYROV, MA
- [8] INVESTIGATION OF GROWTH KINETICS AND POLYTYPISM OF EPITAXIAL LAYERS OF SILICON-CARBIDE GROWN FROM GASEOUS PHASE[J]. KRISTALLOGRAFIYA, 1976, 21 (06): : 1224 - 1226LILOV, SKSAFARALIYEV, GKTAIROV, YMTSVETKOV, VF
- [9] EPITAXIAL SILICON LAYERS OBTAINED BY SUBLIMATION IN VACUO[J]. DOKLADY AKADEMII NAUK SSSR, 1967, 175 (04): : 817 - &POSTNIKO.VVOVSYANNI.MILOGINOVA, RGRUBTSOVA, RASERGIEVS.TNTOLOMASO.VA
- [10] EPITAXIAL GROWTH OF SILICON BY VACUUM SUBLIMATION[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) : 201 - 206HANDELMAN, ETPOVILONIS, EI