POLYTYPISM OF EPITAXIAL LAYERS OF SILICON-CARBIDE

被引：0
|
作者：
SAFARALIYEV, GK [1 ]
TAIROV, YM [1 ]
TSVETKOV, VF [1 ]
机构：
[1] LENINGRAD ELECT ENGN INST,LENINGRAD,USSR
来源：
KRISTALLOGRAFIYA | 1976年 / 21卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1222 / 1223
页数：2
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