POLYTYPISM OF EPITAXIAL LAYERS OF SILICON-CARBIDE

被引：0
|
作者：
SAFARALIYEV, GK [1 ]
TAIROV, YM [1 ]
TSVETKOV, VF [1 ]
机构：
[1] LENINGRAD ELECT ENGN INST,LENINGRAD,USSR
来源：
KRISTALLOGRAFIYA | 1976年 / 21卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1222 / 1223
页数：2
相关论文
共 50 条
  • [21] Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms
    Bagraev, N. T.
    Kukushkin, S. A.
    Osipov, A., V
    Ugolkov, V. L.
    [J]. SEMICONDUCTORS, 2022, 56 (06) : 321 - 324
  • [22] EPITAXIAL DEPOSITION OF SILICON-CARBIDE FROM SILICON TETRACHLORIDE AND HEXANE
    MUENCH, WV
    PFAFFENEDER, I
    [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 39 - 51
  • [23] Polytypism in silicon carbide
    Vlaskina, SI
    Shin, DH
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S258 - S260
  • [24] POLYTYPISM OF SILICON CARBIDE
    DEMESQUITA, AH
    [J]. PHILIPS TECHNICAL REVIEW, 1969, 30 (02): : 36 - +
  • [25] KINETIC CHARACTERISTICS AND MECHANISM OF GROWTH OF EPITAXIAL SILICON-CARBIDE LAYERS OBTAINED BY DIRECT SYNTHESIS IN VACUUM
    TAIROV, YM
    TARANETS, VA
    TSVETKOV, VF
    [J]. INORGANIC MATERIALS, 1979, 15 (01): : 4 - 7
  • [26] SILICON-CARBIDE PLATELET SILICON-CARBIDE COMPOSITES
    MITCHELL, T
    DEJONGHE, LC
    MOBERLYCHAN, WJ
    RITCHIE, RO
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (01) : 97 - 103
  • [27] GROWTH-KINETICS, SOLUBILITY, AND POLYTYPY OF PHOSPHORUS-DOPED EPITAXIAL LAYERS OF SILICON-CARBIDE
    MOKHOV, EN
    USMANOVA, MM
    YULDASHEV, GF
    MAKHMUDOV, BS
    [J]. INORGANIC MATERIALS, 1981, 17 (02): : 180 - 183
  • [28] POLYTYPISM OF SILICON-CARBIDE CRYSTALS STUDIED VIA REFLECTION ELECTRON-DIFFRACTION
    MICHEL, P
    GAUTHIER, JP
    RIWAN, R
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1976, 9 (AUG1) : 318 - 324
  • [29] PREPARATION OF PURE AND BORON-DOPED EPITAXIAL ALPHA-SIC LAYERS ON SILICON-CARBIDE CRYSTALS
    SWIDERSKI, I
    SZCZUTOWSKI, W
    NIEMYSKI, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) : 125 - 134
  • [30] Reducing stress in silicon carbide epitaxial layers
    Danielsson, Ö
    Hallin, C
    Janzén, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) : 289 - 296
12345