Simple model for calculation of SiC epitaxial layers growth rate in vacuum.

被引：0
|
作者：
Davydov, SY
Savkina, NS
Lebedev, AA
Syvajarvi, M
Yakimova, R
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷
关键词：
simple model; growth rate; sublimation epitaxy; vacuum; SiC;
D O I：
10.4028/www.scientific.net/MSF.457-460.249
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Within the frame of a simple model, based on Hertz-Knudsen equation with account of temperature dependant sticking coefficient, temperature dependence of silicon carbide epitaxial layers growth rate in vacuum has been calculated. Calculation results are in a good agreement with the experimental data.
引用
收藏
页码：249 / 252
页数：4
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