STUDY OF SILICON-CARBIDE EPITAXIAL-GROWTH KINETICS IN THE SIC-C SYSTEM

被引：17
|
作者：
LILOV, SK [1 ]
TAIROV, YM [1 ]
TSVETKOV, VF [1 ]
机构：
[1] VI LENIN ELECT ENGN INST,DEPT DIELECT & SEMICOND,LENINGRAD,USSR
来源：
JOURNAL OF CRYSTAL GROWTH | 1979年 / 46卷 / 02期
关键词：
D O I：
10.1016/0022-0248(79)90068-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：269 / 273
页数：5
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