SILICON-CARBIDE EPITAXIAL-GROWTH FROM VAPOR-PHASE AND PROPERTIES OF EPITAXIAL LAYERS

被引：2

作者：

VIOLIN, EY ^{[1
]}

TAIROV, YM ^{[1
]}

FAYANS, OA ^{[1
]}

机构：

[1] VI ULYANOV LENINGRAD ELECTR ENGN INST,197022 LENINGRAD,USSR

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 34卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90143-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：298 / 300

页数：3

共 50 条

[1] MORPHOLOGY AND PROPERTIES OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN FROM THE VAPOR-PHASE
PROKOFEVA, NK
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[J]. INORGANIC MATERIALS, 1983, 19 (11) : 1625 - 1629
[2] STUDIES OF GROWTH KINETICS AND POLYTYPISM OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN FROM VAPOR-PHASE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) : 147 - 151
[3] PREPARATION AND PROPERTIES OF VAPOR-PHASE EPITAXIAL SILICON-CARBIDE DIODES
GRAMBERG, G
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[J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 285 - +
[4] EPITAXIAL-GROWTH OF NICKEL FROM VAPOR-PHASE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1973, 19 (02) : 141 - 146
[5] INVESTIGATIONS OF KINETIC AND THERMAL CONDITIONS OF SILICON-CARBIDE EPITAXIAL LAYER GROWTH FROM THE VAPOR-PHASE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (03) : 403 - 409
[6] GAAS VAPOR-PHASE EPITAXIAL-GROWTH
HARADA, H
[J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1972, 20 (11-1): : 1077 - 1086
[7] SILICON VAPOR-PHASE EPITAXIAL-GROWTH CATALYSIS BY THE PRESENCE OF GERMANE
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[J]. APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1275 - 1277
[8] EPITAXIAL-GROWTH OF AIIIBV SEMICONDUCTORS FROM VAPOR-PHASE
GOROG, T
LENDVAY, E
[J]. ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1978, 44 (01): : 13 - 28
[9] EPITAXIAL-GROWTH OF A-SIC FROM VAPOR-PHASE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) : 1680 - +
[10] VAPOR-PHASE EPITAXIAL-GROWTH OF ZNS ON GAP
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[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 192 - 197

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