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- [2] STUDIES OF GROWTH KINETICS AND POLYTYPISM OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN FROM VAPOR-PHASEJOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) : 147 - 151TAIROV, YMTSVETKOV, VFLILOV, SKSAFARALIEV, GK
- [3] PREPARATION AND PROPERTIES OF VAPOR-PHASE EPITAXIAL SILICON-CARBIDE DIODESSOLID-STATE ELECTRONICS, 1972, 15 (03) : 285 - +GRAMBERG, GKONIGER, M
- [5] INVESTIGATIONS OF KINETIC AND THERMAL CONDITIONS OF SILICON-CARBIDE EPITAXIAL LAYER GROWTH FROM THE VAPOR-PHASEJOURNAL OF CRYSTAL GROWTH, 1979, 46 (03) : 403 - 409TAIROV, YMTSVETKOV, VF
- [6] INVESTIGATION OF GROWTH KINETICS AND POLYTYPISM OF EPITAXIAL LAYERS OF SILICON-CARBIDE GROWN FROM GASEOUS PHASEKRISTALLOGRAFIYA, 1976, 21 (06): : 1224 - 1226LILOV, SKSAFARALIYEV, GKTAIROV, YMTSVETKOV, VF
- [7] POLYTYPISM OF EPITAXIAL LAYERS OF SILICON-CARBIDEKRISTALLOGRAFIYA, 1976, 21 (06): : 1222 - 1223SAFARALIYEV, GKTAIROV, YMTSVETKOV, VF
- [8] Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of AtomsSemiconductors, 2022, 56 : 321 - 324N. T. BagraevS. A. KukushkinA. V. OsipovV. L. Ugolkov
- [9] Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of AtomsSEMICONDUCTORS, 2022, 56 (06) : 321 - 324Bagraev, N. T.Kukushkin, S. A.Osipov, A., VUgolkov, V. L.
- [10] FORMATION OF FINE SILICON-CARBIDE POWDERS BY A VAPOR-PHASE METHODJOURNAL OF THE LESS-COMMON METALS, 1979, 68 (01): : 29 - 41OKABE, YHOJO, JKATO, A