OPTICAL AND STRUCTURAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIAL GAAS ON SAPPHIRE

被引：3
|
作者：
CHIN, A
BHATTACHARYA, P
CHANG, KH
BISWAS, D
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584734
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：283 / 288
页数：6
相关论文
共 50 条
  • [1] OPTICAL AND STRUCTURAL-PROPERTIES OF GAAS GROWN ON (100)SI BY MOLECULAR-BEAM EPITAXY
    STOLZ, W
    GUIMARAES, FEG
    PLOOG, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 492 - 499
  • [2] STRUCTURAL-PROPERTIES OF THE ZNSE GAAS SYSTEM GROWN BY MOLECULAR-BEAM EPITAXY
    PETRUZZELLO, J
    GREENBERG, BL
    CAMMACK, DA
    DALBY, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2299 - 2303
  • [3] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS ON SAPPHIRE AND SILICON-ON-SAPPHIRE SUBSTRATES
    HUMPHREYS, TP
    PARIKH, NR
    DAS, K
    POSTHILL, JB
    NEMANICH, RJ
    SUMMERVILLE, MK
    SUKOW, CA
    MINER, CJ
    [J]. ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 195 - 200
  • [4] EFFECT OF N DOPING ON THE STRUCTURAL-PROPERTIES OF ZNSE EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    PETRUZZELLO, J
    GAINES, J
    VANDERSLUIS, P
    OLEGO, D
    PONZONI, C
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (13) : 1496 - 1498
  • [5] CARBON IN MOLECULAR-BEAM EPITAXIAL GAAS
    STRINGFELLOW, GB
    STALL, R
    KOSCHEL, W
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 156 - 157
  • [6] ELECTRICAL AND STRUCTURAL-PROPERTIES OF INAS LAYERS ON (100)GAAS SUBSTRATES PREPARED BY MOLECULAR-BEAM DEPOSITION
    MEGGITT, BT
    PARKER, EHC
    KING, RM
    GRANGE, JD
    [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (02) : 538 - 548
  • [7] STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
    KAMINSKA, M
    LILIENTALWEBER, Z
    WEBER, ER
    GEORGE, T
    KORTRIGHT, JB
    SMITH, FW
    TSAUR, BY
    CALAWA, AR
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1881 - 1883
  • [8] MOLECULAR-BEAM EPITAXIAL GAAS OPTICAL-DETECTORS ON SILICA FIBERS
    LI, WQ
    CHIN, A
    BHATTACHARYA, P
    DIVITA, S
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1768 - 1770
  • [9] EFFECTS OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL-PROPERTIES OF CDTE(111) GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS(100)
    RENO, JL
    GOURLEY, PL
    MONFROY, G
    FAURIE, JP
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (18) : 1747 - 1749
  • [10] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS
    WOOD, CEC
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748
12345