共 50 条
- [21] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(331) [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3766 - 3771
- [22] IMPROVED MOLECULAR-BEAM EPITAXIAL GAAS POWER FETS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2074 - 2078
- [25] OPTICAL AND STRUCTURAL-PROPERTIES OF EPITAXIAL AGI FILMS [J]. UKRAINSKII FIZICHESKII ZHURNAL, 1992, 37 (04): : 611 - 615
- [26] EFFECT OF SUBSTRATE MISCUT ON THE STRUCTURAL-PROPERTIES OF INGAAS LINEAR GRADED BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 689 - 691
- [27] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SILICON AND SILICON ON SAPPHIRE INCORPORATING A LOW-TEMPERATURE BUFFER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 297 - 300
- [28] MOLECULAR-BEAM EPITAXIAL-GROWTH OF NIAL ON GAAS(001) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 737 - 741
- [30] EPITAXIAL-GROWTH OF CDTE ON GAAS BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2150 - 2152