ELECTRICAL AND STRUCTURAL-PROPERTIES OF INAS LAYERS ON (100)GAAS SUBSTRATES PREPARED BY MOLECULAR-BEAM DEPOSITION

被引：19
|
作者：
MEGGITT, BT [1 ]
PARKER, EHC [1 ]
KING, RM [1 ]
GRANGE, JD [1 ]
机构：
[1] CITY LONDON POLYTECH,DEPT PHYS,CASS SEMICONDUCTOR & SURFACE RES,LONDON EC3N 2EY,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 02期
关键词：
D O I：
10.1016/0022-0248(80)90105-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：538 / 548
页数：11
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