CARBON IN MOLECULAR-BEAM EPITAXIAL GAAS

被引：25

作者：

STRINGFELLOW, GB

STALL, R

KOSCHEL, W

机构：

[1] CORNELL UNIV,NATL RES RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 03期

关键词：

D O I：

10.1063/1.92284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：156 / 157

页数：2

共 50 条

[1] ON RESIDUAL CARBON ACCEPTORS IN MOLECULAR-BEAM EPITAXIAL GAAS
KERR, TM
WOOD, CEC
NEWSTEAD, SM
WILCOX, JD
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (07) : 2673 - 2676
[2] CARBON TETRABROMIDE CARBON DOPING OF MOLECULAR-BEAM EPITAXIAL (GAAS) FILMS
HOKE, WE
WEIR, DG
LEMONIAS, PJ
HENDRIKS, HT
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (02) : 202 - 204
[3] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS
WOOD, CEC
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748
[4] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS
SMITH, RS
MULLER, HD
ENNEN, H
WENNEKERS, P
MAIER, M
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51
[5] EPITAXIAL GAAS FILMS DEPOSITED BY MOLECULAR-BEAM METHOD
NAGANUMA, M
TAKAHASHI, K
[J]. ELECTRICAL ENGINEERING IN JAPAN, 1973, 93 (05) : 19 - 24
[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS (331)
UPPAL, PN
AHEARN, JS
MUSSER, DP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 759 - 760
[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(331)
UPPAL, PN
AHEARN, JS
MUSSER, DP
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3766 - 3771
[8] IMPROVED MOLECULAR-BEAM EPITAXIAL GAAS POWER FETS
WOOD, CEC
DESIMONE, D
JUDAPRAWIRA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2074 - 2078
[9] CARBON P+ DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS FILMS USING CARBON TETRABROMIDE
LEMONIAS, PJ
HOKE, WE
WEIR, DG
HENDRIKS, HT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1190 - 1192
[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF NIAL ON GAAS(001)
CHAMBERS, SA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 737 - 741

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