LOW-TEMPERATURE FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN PD2SI FILMS ON SI SUBSTRATES

被引：2

作者：

LIN, CT ^{[1
]}

MA, KP ^{[1
]}

CHOU, PF ^{[1
]}

CHENG, HC ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, NATL NANO DEVICE LAB, HSINCHU 30039, TAIWAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 05期

关键词：

D O I：

10.1149/1.2048616

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Excellent silicided shallow p(+)n junctions have been successfully achieved by the implantation of BF2+ ions into thin Pd2Si films on Si substrates to a dose of 5 x 10(15) cm(-2) and subsequent low temperature (even at 550 degrees C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm(2) and an ideality factor of about 1.05 can be attained by the implantation of BF2+ ions at 80 keV and subsequent annealing at 550 degrees C. The junction depth is about 0.09 mu m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF2+ ions into a thin Pd2Si layer can stabilize the silicide film and prevent it from forming islands during high temperature annealing.

引用

页码：1579 / 1584

页数：6

共 50 条

[31] EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMS
JUANG, MH
CHENG, HC
JOURNAL OF APPLIED PHYSICS, 1992, 71 (03) : 1265 - 1270
[32] FORMATION OF SHALLOW P+N JUNCTIONS BY B-ION IMPLANTATION IN SI SUBSTRATES WITH AMORPHOUS LAYERS
ISHIWARA, H
HORITA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05): : 568 - 573
[33] FORMATION OF SHALLOW p + n JUNCTIONS BY B-ION IMPLANTATION IN Si SUBSTRATES WITH AMORPHOUS LAYERS.
Ishiwara, Hiroshi
Horita, Susumu
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (05): : 568 - 573
[34] SPECIFIC CONTACT RESISTANCE OF PD2SI CONTACTS ON N-SI AND P-SI
SHEPELA, A
SOLID-STATE ELECTRONICS, 1973, 16 (04) : 477 - 481
[35] LOW-TEMPERATURE SPECIFIC-HEAT AND RESISTIVITY OF SINGLE-CRYSTALLINE PD2SI
LABORDE, O
LASJAUNIAS, JC
MARANI, R
ROUAULT, A
MADAR, R
PHYSICAL REVIEW B, 1990, 41 (14): : 9721 - 9724
[36] SURFACE-STRUCTURE OF EPITAXIAL PD2SI THIN-FILMS
OURA, K
OKADA, S
KISHIKAWA, Y
HANAWA, T
APPLIED PHYSICS LETTERS, 1982, 40 (02) : 138 - 140
[37] THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P+-N JUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE
JUANG, MH
CHENG, HC
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) : 220 - 222
[38] XEPITAXIAL-GROWTH AND THERMAL-STABILITY OF THIN PD2SI FILMS ON (001)SI, (011)SI AND (111)SI
CHEN, JF
CHEN, LJ
THIN SOLID FILMS, 1995, 261 (1-2) : 107 - 114
[39] Low-temperature deposition of ultrathin SiO2 films on Si substrates
Vitanov, P.
Harizanova, A.
Ivanova, T.
Dikov, H.
18TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES (VEIT2013), 2014, 514
[40] EPITAXIAL-GROWTH OF PD2SI FILMS ON SI(111) SUBSTRATES BY SCANNING ELECTRON-BEAM ANNEALING
ISHIWARA, H
YAMAMOTO, H
APPLIED PHYSICS LETTERS, 1982, 41 (08) : 718 - 720

← 1 2 3 4 5 →