ANNEALING OF RADIATION INDUCED DEFECTS IN SILICON

被引：8

|

作者：

FANG, PH

机构：

来源：

PHYSICS LETTERS | 1966年 / 20卷 / 04期

关键词：

D O I：

10.1016/0031-9163(66)90730-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：343 / &

相关论文

共 50 条

[41] INVESTIGATION OF NEGATIVE ANNEALING OF GAMMA-RADIATION DEFECTS IN DIFFUSED SILICON DIODES
BERMAN, LS
SHUMAN, VB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (09): : 1043 - 1044
[42] KINETICS OF THERMAL ANNEALING OF RADIATION DEFECTS IN SILICON DOPED BY ION IMPLANTATION METHOD
GUSEV, VM
TITOV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 1 - &
[43] INVESTIGATION OF NEGATIVE ANNEALING OF gamma -RADIATION DEFECTS IN DIFFUSED SILICON DIODES.
Berman, L.S.
Shuman, V.B.
1600, (10):
[44] Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance
Lazanu, I
Lazanu, S
PHYSICA SCRIPTA, 2002, 66 (02) : 125 - 132
[45] ANNEALING OF RADIATION DEFECTS IN CADMIUM
CHRISTIANSEN, J
KEITEL, R
KLINGER, W
SANDNER, W
WITTHUHN, W
HYPERFINE INTERACTIONS, 1978, 4 (1-2): : 768 - 772
[46] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS
BROWN, WL
AUGUSTYNIAK, WM
WAITE, TR
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1258 - 1268
[47] Annealing of 'intrinsic' and photo-induced defects in hydrogenated amorphous silicon
Parsons, G.N.
Wang, C.
Lucovsky, G.
Thin Solid Films, 1990, 194 (1 -2 pt 2) : 577 - 587
[48] THERMAL ANNEALING OF EXCIMER-LASER-INDUCED DEFECTS IN VIRGIN SILICON
HARTITI, B
SLAOUI, A
MULLER, JC
SIFFERT, P
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 257 - 260
[49] ANNEALING OF IRRADIATION-INDUCED DEFECTS IN ARSENIC-DOPED SILICON
EVWARAYE, AO
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1840 - 1843
[50] Dynamic annealing versus thermal annealing effects on the formation of hydrogen-induced defects in silicon
Di, Z. F.
Huang, M. Q.
Wang, Y. Q.
Nastasi, M.
APPLIED PHYSICS LETTERS, 2010, 97 (19)

← 1 2 3 4 5 →