ANNEALING OF RADIATION INDUCED DEFECTS IN SILICON

被引:8
|
作者
FANG, PH
机构
来源
PHYSICS LETTERS | 1966年 / 20卷 / 04期
关键词
D O I
10.1016/0031-9163(66)90730-X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:343 / &
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