REPAIR OF RADIATION DEFECTS BY ANNEALING OF NEUTRON DISSOCIATED SILICON AND VANADIUM MONOCRYSTALS

被引：0

作者：

LARIKOV, LN

PLOTNIKOVA, NP

PRIMUSHKO, VN

机构：

来源：

ZHURNAL TEKHNICHESKOI FIZIKI | 1980年 / 50卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：835 / 838

页数：4

共 50 条

[1] RADIATION ANNEALING OF DEFECTS IN NEUTRON-BOMBARDED SILICON
MORDKOVICH, VN
SOLOVEV, SP
TEMPER, EM
KHARCHENKO, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 666 - 666
[2] CHARACTERISTICS OF RADIATION DEFECTS ANNEALING IN NEUTRON-ALLOYED SILICON
MAKHKAMOV, S
MAMANOVA, M
PAKHARUKOV, YV
TURSUNOV, NA
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1992, 18 (24): : 44 - 48
[3] NEUTRON-DIFFRACTION STUDY OF DEFECTS IN SILICON MONOCRYSTALS
EFIMOVICH, ON
SOLOVYEV, SP
KHARCHENKO, VA
KRISTALLOGRAFIYA, 1981, 26 (03): : 625 - 627
[4] ANNEALING OF RADIATION DEFECTS IN SILICON IRRADIATED WITH DENSE NEUTRON FLUXES.
Lappo, M.T.
Chernyi, V.V.
1600, (32):
[5] INVESTIGATION OF THE KINETICS OF ANNEALING OF RADIATION DEFECTS IN NEUTRON-BOMBARDED SILICON
BABITSKII, YM
VORONOV, IN
GRINSHTEIN, PM
MOROKHOVETS, MA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 597 - 598
[6] INVESTIGATION OF THE KINETICS OF ANNEALING OF RADIATION DEFECTS IN NEUTRON-BOMBARDED SILICON.
BABITSKII, YU.M.
VORONOV, I.N.
GRINSHTEIN, P.M.
MOROKHOVETS, M.A.
1982, V 16 (N 5): : 597 - 598
[7] ANNEALING OF RADIATION INDUCED DEFECTS IN SILICON
FANG, PH
PHYSICS LETTERS, 1966, 20 (04): : 343 - &
[8] ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN SILICON AS A FUNCTION OF THE TEMPERATURE DURING NEUTRON-IRRADIATION
ANTONENKO, AK
BOLOTOV, VV
DVURECHENSKII, AV
STUCHINSKII, VA
KHARCHENKO, VA
STUK, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 560 - 563
[9] NEUTRON EFFECT ON SILICON MONOCRYSTALS
FANICA, M
GHITA, I
MESTER, A
STUDII SI CERCETARI DE FIZICA, 1975, 27 (10): : 985 - 990
[10] Annealing of Radiation-Induced Defects in Silicon
Gaidar, G. P.
SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY, 2012, 48 (01) : 78 - 89

← 1 2 3 4 5 →