ANNEALING OF RADIATION INDUCED DEFECTS IN SILICON

被引：8

作者：

FANG, PH

机构：

来源：

PHYSICS LETTERS | 1966年 / 20卷 / 04期

关键词：

D O I：

10.1016/0031-9163(66)90730-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：343 / &

共 50 条

[1] Annealing of Radiation-Induced Defects in Silicon
Gaidar, G. P.
SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY, 2012, 48 (01) : 78 - 89
[2] Annealing of radiation-induced defects in silicon
G. P. Gaidar
Surface Engineering and Applied Electrochemistry, 2012, 48 : 78 - 89
[3] Annealing of radiation-induced defects in silicon in a simplified phenomenological model
Lazanu, S
Lazanu, I
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 183 (3-4): : 383 - 390
[4] IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN SILICON
FANG, PH
ILES, P
APPLIED PHYSICS LETTERS, 1969, 14 (04) : 131 - +
[5] Radiation induced defects in silicon
Watts, SJ
HIGH PURITY SILICON V, 1998, 98 (13): : 355 - 370
[6] THE EFFECT OF ANNEALING ON THE SPATIAL DISTRIBUTION OF RADIATION DEFECTS IN SILICON
YURKOV, BY
SOVIET PHYSICS-SOLID STATE, 1962, 4 (04): : 626 - 628
[7] Annealing of radiation defects in dual-implanted silicon
Kozlov, IP
Odzhaev, VB
Popok, VN
Hnatowicz, V
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) : 722 - 725
[8] KINETICS OF FORMATION AND ANNEALING OF RADIATION DEFECTS ON SURFACE OF SILICON
ABULADZE, MN
GERASIMOV, AB
LITOVCHENKO, VG
MELKADZE, TE
SHILLO, AG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (04): : 508 - 509
[9] RADIATION ANNEALING OF DEFECTS IN NEUTRON-BOMBARDED SILICON
MORDKOVICH, VN
SOLOVEV, SP
TEMPER, EM
KHARCHENKO, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 666 - 666
[10] GERMANIUM EFFECT ON THE FORMATION AND ANNEALING OF RADIATION-INDUCED DEFECTS IN NUCLEARLY DOPED SILICON
KOLIN, NG
LUGAKOV, PF
LUKYANITSA, VV
STUK, AA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1990, 33 (11): : 98 - 102

← 1 2 3 4 5 →