REPAIR OF RADIATION DEFECTS BY ANNEALING OF NEUTRON DISSOCIATED SILICON AND VANADIUM MONOCRYSTALS

被引：0
|
作者：
LARIKOV, LN
PLOTNIKOVA, NP
PRIMUSHKO, VN
机构：
来源：
ZHURNAL TEKHNICHESKOI FIZIKI | 1980年 / 50卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：835 / 838
页数：4
相关论文
共 50 条
  • [41] EFFECTS OF HYDROGEN ON THE ANNEALING BEHAVIOR OF NEUTRON-RADIATION-INDUCED DEFECTS IN SI
    MENG, XT
    ZECCA, A
    BRUSA, RS
    PUFF, W
    PHYSICAL REVIEW B, 1994, 50 (04) : 2657 - 2660
  • [42] Modeling of neutron radiation-induced defects in silicon particle detectors
    Jain, Chakresh
    Saumya, Saumya
    Jain, Geetika
    Dalal, Ranjeet
    Agrawal, Namrata
    Bhardwaj, Ashutosh
    Ranjan, Kirti
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (04)
  • [43] Isothermal annealing of radiation defects in silicon bulk material of diodes from 8'' silicon wafers
    Kieseler, Jan
    de Almeida, Pedro Goncalo Dias
    Kaluzinska, Oliwia Agnieszka
    Muhlnikel, Marie Christin
    Diehl, Leena
    Sicking, Eva
    Zehetner, Philipp
    JOURNAL OF INSTRUMENTATION, 2023, 18 (09)
  • [44] OPTICAL-PROPERTIES OF DEFECTS PRODUCED AT ANNEALING OF NEUTRON-INDUCED CLUSTERS IN SILICON
    AKHMETOV, VD
    BOLOTOV, VV
    SMIRNOV, LS
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (01): : K33 - K37
  • [45] Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing
    Jung, W
    Kaniewska, M
    Misiuk, A
    Londos, CA
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 115 - 118
  • [46] RADIATION-ANNEALING STRENGTHENING OF VANADIUM
    GOMOZOV, LI
    DIDYK, AY
    ZVEREVA, TN
    SASHIN, IL
    SKURATOV, VA
    FIZIKA METALLOV I METALLOVEDENIE, 1990, (07): : 160 - 167
  • [47] INVESTIGATION OF NEGATIVE ANNEALING OF GAMMA-RADIATION DEFECTS IN DIFFUSED SILICON DIODES
    BERMAN, LS
    SHUMAN, VB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (09): : 1043 - 1044
  • [48] KINETICS OF THERMAL ANNEALING OF RADIATION DEFECTS IN SILICON DOPED BY ION IMPLANTATION METHOD
    GUSEV, VM
    TITOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (01): : 1 - &
  • [49] INVESTIGATION OF NEGATIVE ANNEALING OF gamma -RADIATION DEFECTS IN DIFFUSED SILICON DIODES.
    Berman, L.S.
    Shuman, V.B.
    1600, (10):
  • [50] Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance
    Lazanu, I
    Lazanu, S
    PHYSICA SCRIPTA, 2002, 66 (02) : 125 - 132
12345