ELECTRICAL-CONDUCTIVITY OF DISORDERED LAYERS IN GAAS CRYSTAL PRODUCED BY ION-IMPLANTATION

被引：63
|
作者：
KATO, Y [1 ]
SHIMADA, T [1 ]
SHIRAKI, Y [1 ]
KOMATSUB.KF [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期
关键词：
D O I：
10.1063/1.1663366
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1044 / 1049
页数：6
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