HIGH-QUALITY PARA-TYPE HGCDTE GROWN BY MOLECULAR-BEAM EPITAXY

The galvanomagnetic transport in (111)B HgCdTe p-type layers, grown by molecular beam epitaxy, was studied as a function of temperature and magnetic field strength. Experimental data on the Hall coefficient and conductivity tensor versus magnetic field have been analyzed with the assumption of three charge carriers involved in the conduction mechanism: one carrier coming from the conduction band and the other two from the complex nature of the valence band. Indeed, two kinds of positive charge carriers with completely different mobilities in the extrinsic region are seen. The extracted parameters are in very good agreement with the intrinsic concentration over a wide temperature range.