HIGH-QUALITY INALAS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY AT VERY HIGH ARSENIC OVERPRESSURES

被引：0
|
作者：
YOON, SF
MIAO, YB
RADHAKRISHNAN, K
SWAMINATHAN, S
机构：
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 2263, Nanyang Avenue
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1995年 / 14卷 / 19期
关键词：
D O I：
10.1007/BF00270733
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1374 / 1376
页数：3
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