HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：46
|
作者：
TSANG, WT
MILLER, RC
CAPASSO, F
BONNER, WA
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期
关键词：
D O I：
10.1063/1.93534
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：467 / 469
页数：3
相关论文
共 50 条
  • [1] HIGH-QUALITY INALAS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY AT VERY HIGH ARSENIC OVERPRESSURES
    YOON, SF
    MIAO, YB
    RADHAKRISHNAN, K
    SWAMINATHAN, S
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1995, 14 (19) : 1374 - 1376
  • [2] GROWTH OF HIGH-QUALITY INP WITH METAL ORGANIC MOLECULAR-BEAM EPITAXY
    HEINECKE, H
    HOGER, R
    BAUR, B
    MIKLIS, A
    [J]. ELECTRONICS LETTERS, 1990, 26 (03) : 213 - 214
  • [3] Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy
    Zhuravlev, KS
    Toropov, AI
    Shamirzaev, TS
    Bakarov, AK
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (09) : 1131 - 1133
  • [4] HIGH-QUALITY INP GROWN BY CHEMICAL BEAM EPITAXY
    ROTHFRITZ, H
    TRANKLE, G
    MULLER, R
    WEIMANN, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) : 130 - 134
  • [5] HIGH-QUALITY AL0.48IN0.52 AS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH INP-SUBSTRATE TEMPERATURE
    TOURNIE, E
    ZHANG, YH
    PLOOG, K
    [J]. MATERIALS LETTERS, 1991, 11 (10-12) : 343 - 347
  • [6] INVESTIGATION OF HIGH-QUALITY GAAS-IN LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    UDDIN, A
    ANDERSSON, TG
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) : 3101 - 3106
  • [7] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    YAO, T
    OGURA, M
    MATSUOKA, S
    MORISHITA, T
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 499 - 501
  • [8] HIGH-QUALITY PARA-TYPE HGCDTE GROWN BY MOLECULAR-BEAM EPITAXY
    WIJEWARNASURIYA, PS
    BOUKERCHE, M
    FAURIE, JP
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 859 - 862
  • [9] HIGH-QUALITY QUANTUM WELLS OF INGAP GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    HAFICH, MJ
    QUIGLEY, JH
    OWENS, RE
    ROBINSON, GY
    LI, D
    OTSUKA, N
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2686 - 2688
  • [10] HIGH-QUALITY GAAS-MESFETS GROWN ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    PENG, CK
    HENDERSON, T
    KOPP, W
    FISCHER, R
    ERICKSON, LP
    LONGERBONE, MD
    YOUNGMAN, RC
    [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 381 - 383
12345