HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：46
|
作者：
TSANG, WT
MILLER, RC
CAPASSO, F
BONNER, WA
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期
关键词：
D O I：
10.1063/1.93534
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：467 / 469
页数：3
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