OPTICAL-QUALITY GAINAS GROWN BY MOLECULAR-BEAM EPITAXY

被引:24
|
作者
WICKS, G
WOOD, CEC
OHNO, H
EASTMAN, LF
机构
关键词
D O I
10.1007/BF02654681
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:435 / 440
页数:6
相关论文
共 50 条
  • [1] IN INCORPORATION IN GAINAS GROWN BY MOLECULAR-BEAM EPITAXY
    WOODBRIDGE, K
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2911 - 2913
  • [2] HIGH OPTICAL-QUALITY GA0.5IN0.5P GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    CHENG, KY
    BAILLARGEON, JN
    HSIEH, KC
    NAM, DW
    VESELY, E
    FERNANDEZ, GE
    HOLONYAK, N
    FU, RJ
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 31 - 31
  • [3] IMPROVEMENTS TO AND CHARACTERIZATION OF GAINAS/ALINAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
    SCOTT, EG
    DAVEY, ST
    HALLIWELL, MAG
    DAVIES, GJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 603 - 606
  • [4] HIGH MOBILITY GAINAS THIN-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    MIZUTANI, T
    HIROSE, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L119 - L121
  • [5] RESIDUAL DEFECT CENTER IN GAINAS/INP FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    LOUALICHE, S
    GAUNEAU, A
    LECORRE, A
    LECROSNIER, D
    LHARIDON, H
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1361 - 1363
  • [6] EXTREMELY UNIFORM GAAS-ALGAAS HETEROSTRUCTURE LAYERS WITH HIGH OPTICAL-QUALITY BY MOLECULAR-BEAM EPITAXY
    FUJII, T
    HIYAMIZU, S
    WADA, O
    SUGAHARA, T
    YAMAKOSHI, S
    SAKURAI, T
    HASHIMOTO, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 393 - 396
  • [7] In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy
    France, R.
    Jiang, C. -S.
    Ptak, A. J.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (10)
  • [8] KINK-FREE ALLNAS/GAINAS/INP HEMTS GROWN BY MOLECULAR-BEAM EPITAXY
    LUO, LF
    LONGENBACH, KF
    WANG, WI
    [J]. ELECTRONICS LETTERS, 1990, 26 (12) : 779 - 780
  • [9] HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY
    TSANG, WT
    MILLER, RC
    CAPASSO, F
    BONNER, WA
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 467 - 469
  • [10] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    CHANG, LL
    ESAKI, L
    HOWARD, WE
    LUDEKE, R
    SCHUL, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662