High-quality and thick InN films grown on 2-inch sapphire substrate by molecular-beam epitaxy

被引：11

作者：

Xu, K ^{[1
]}

Hashimoto, N ^{[1
]}

Cao, B ^{[1
]}

Hata, T ^{[1
]}

Terashima, W ^{[1
]}

Yoshitani, M ^{[1
]}

Ishitani, Y ^{[1
]}

Yoshikawa, A ^{[1
]}

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303269

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InN growth on 2-inch sapphire (0001) with thickness up to 5 mum was demonstrated by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). The surfaces of the 2-inch samples were mirror-like and atomic growth steps were observed in large areas. The room temperature Hall mobility crossing the 2-inch InN wafers ranged from 900 to 1100 cm(2)/Vs, with electron concentration of the order of 10(18)/cm(3). The optical bandgap of the InN layers with electron concentration of the order of 10(18)/cm(3) was 0.70-0.74 eV measured by optical transmission/reflection spectroscopy. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2790 / 2793

页数：4

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