GROWTH OF SINGLE DOMAIN GAAS ON 2-INCH SI(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：61
|
作者：
NISHI, S
INOMATA, H
AKIYAMA, M
KAMINISHI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 06期
关键词：
D O I：
10.1143/JJAP.24.L391
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L391 / L393
页数：3
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