MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES

被引：176
|
作者：
FARRELL, HH
HARBISON, JP
PETERSON, LD
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期
关键词：
D O I：
10.1116/1.583660
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1482 / 1489
页数：8
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