MOLECULAR-BEAM EPITAXY OF CONTROLLED SINGLE DOMAIN GAAS ON SI (100)

被引：47
|
作者：
KAWABE, M
UEDA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 04期
关键词：
D O I：
10.1143/JJAP.25.L285
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L285 / L287
页数：3
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