FORMATION OF CUCL ULTRAFINE PARTICLES IN SILICA GLASS BY ION-IMPLANTATION

被引：16
|
作者：
FUKUMI, K
CHAYAHARA, A
KITAMURA, N
AKAI, T
HAYAKAWA, J
FUJII, K
SATOU, M
机构：
[1] Government Industrial Research Institute, Osaka, Ikeda, Osaka, 563, 1-8-31, Midorigaoka
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 178卷 / pt 2期
关键词：
D O I：
10.1016/0022-3093(94)90279-8
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Silica glass dispersed with CuCl ultrafine particles is prepared by the implantation of 3 MeV 6 X 10(16) Cl2+ ions cm(-2) and 3 MeV 6 X 10(16) Cu2+ ions cm(-2). It is deduced that the implanted Cu ions form mainly ultrafine Cu metallic particles in the as-implanted silica glass. The ultrafine Cu metallic particles react with Cl atoms to form CuCl ultrafine particles by heating up to 900-1000 degrees C. The number of Cu and Cl ions forming the CuCl ultrafine particles is consistent with the fluence levels of these ions. A large number of CuCl ultrafine particles can be dispersed in silica glass.
引用
收藏
页码：155 / 159
页数：5
相关论文
共 50 条
  • [31] DAMAGE FORMATION AND ANNEALING OF ION-IMPLANTATION IN SI
    TAMURA, M
    MATERIALS SCIENCE REPORTS, 1991, 6 (4-5): : 141 - 214
  • [32] OPTICAL-WAVEGUIDE FORMATION BY ION-IMPLANTATION
    TOWNSEND, PD
    RADIATION PHYSICS AND CHEMISTRY, 1983, 22 (06): : 1049 - 1049
  • [33] POSSIBILITIES OF THE FORMATION OF CARBIDES AND BORIDES BY ION-IMPLANTATION
    DIENEL, G
    HOHMUTH, K
    TREUTLER, CPO
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4): : 67 - 71
  • [34] FORMATION OF SCHOTTKY JUNCTIONS IN SILICON BY ION-IMPLANTATION
    BOLLMANN, J
    KLOSE, H
    MERTENS, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (01): : K95 - K99
  • [35] FORMATION OF BORIDES AND NITRIDES BY ION-IMPLANTATION IN IRON
    RAUSCHENBACH, B
    HEERA, V
    JOURNAL OF THE LESS-COMMON METALS, 1986, 117 (1-2): : 323 - 327
  • [36] FORMATION OF GLASSY FILMS BY ION-IMPLANTATION INTO METALS
    HOHMUTH, K
    KOLITSCH, A
    RAUSCHENBACH, B
    RICHTER, E
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 56 (1-3) : 381 - 384
  • [37] THE FORMATION OF BURIED OXIDE LAYERS BY ION-IMPLANTATION
    WOODS, TA
    ANTONELLI, E
    COLLINS, RA
    CHIVERS, DJ
    DEARNALEY, G
    VACUUM, 1986, 36 (11-12) : 883 - 885
  • [38] FORMATION OF BURIED NITRIDE LAYERS BY ION-IMPLANTATION
    DANILOWITSCH, J
    GARTNER, K
    GOTZ, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 32 (1-4): : 437 - 439
  • [39] BURIED INSULATOR FORMATION IN SILICON BY ION-IMPLANTATION
    STEIN, HJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C319 - C319
  • [40] MECHANISMS OF BURIED OXIDE FORMATION BY ION-IMPLANTATION
    WHITE, AE
    SHORT, KT
    BATSTONE, JL
    JACOBSON, DC
    POATE, JM
    WEST, KW
    APPLIED PHYSICS LETTERS, 1987, 50 (01) : 19 - 21
12345