A SUBMICROMETER MEGABIT DRAM PROCESS TECHNOLOGY USING TRENCH CAPACITORS

被引：2
|
作者：
NAKAJIMA, S
MINEGISHI, K
MIURA, K
MORIE, T
KIMIZUKA, M
MANO, T
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期
关键词：
D O I：
10.1109/JSSC.1985.1052285
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：130 / 136
页数：7
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