Investigation on the Local Variation in BCAT Process for DRAM Technology

被引：0

作者：

Jeon, Sanghyeon ^{[1
]}

Choi, Jaehyun ^{[1
]}

Jung, Hyuck-chai ^{[1
]}

Kim, Senyung ^{[1
]}

Lee, Taewoo ^{[1
]}

机构：

[1] Samsung Elect Co, Memory Div, Yield Enhancement Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea

来源：

2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页数：2

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