Investigation on the Local Variation in BCAT Process for DRAM Technology

被引：0
|
作者：
Jeon, Sanghyeon [1 ]
Choi, Jaehyun [1 ]
Jung, Hyuck-chai [1 ]
Kim, Senyung [1 ]
Lee, Taewoo [1 ]
机构：
[1] Samsung Elect Co, Memory Div, Yield Enhancement Team, San 16 Banwol Dong, Hwasung City 445701, Gyeonggi Do, South Korea
来源：
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页数：2
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