共 50 条
- [43] GROWTH BY MOLECULAR-BEAM EPITAXY OF THICK-FILMS OF INXGA1-XAS (X ALMOST-EQUAL-TO 0.53) ON SI(100) SUBSTRATES MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 151 - 155
- [44] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXGA1-XAS AND INXAL1-XAS ON SI SUBSTRATES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (07): : 1276 - 1277
- [48] Molecular-beam epitaxy of BeTe layers on GaAs substrates Journal of Crystal Growth, 1999, 201 : 494 - 497