LAYERS OF INXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY ON SUBSTRATES OF (100) GAAS

被引：0
|
作者：
DVORYANKINA, GG
DVORYANKIN, VF
PETROV, AG
POROTIKOV, AP
KUDRYASHOV, AA
ORMONT, AB
VARAKSIN, GA
DLUGACH, LB
机构：
来源：
INORGANIC MATERIALS | 1988年 / 24卷 / 07期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：920 / 924
页数：5
相关论文
共 50 条
  • [31] Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates
    Méndez-García, VH
    López-López, M
    Lastras-Martínez, A
    Vidal, MA
    Luyo-Alvarado, J
    Meléndez-Lira, M
    Momose, K
    Yonezu, H
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 639 - 644
  • [32] Peculiarities of strain relaxation in linearly graded InxGa1-xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy
    Sorokin, S. V.
    Klimko, G. V.
    Sedova, I. V.
    Sitnikova, A. A.
    Kirilenko, D. A.
    Baidakova, M. V.
    Yagovkina, M. A.
    Komissarova, T. A.
    Belyaev, K. G.
    Ivanov, S. V.
    JOURNAL OF CRYSTAL GROWTH, 2016, 455 : 83 - 89
  • [33] GROWTH OF INXGA1-XAS ON PATTERNED GAAS (100) SUBSTRATES
    GUHA, S
    MADHUKAR, A
    KAVIANI, K
    KAPRE, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 149 - 153
  • [34] GROWTH BY MOLECULAR-BEAM EPITAXY OF THICK-FILMS OF INXGA1-XAS (X-APPROXIMATELY-0.53) ON SI(100) SUBSTRATES
    WESTWOOD, DI
    WOOLF, DA
    CLARK, SA
    JOURNAL OF CRYSTAL GROWTH, 1991, 114 (03) : 346 - 350
  • [35] Growth of InxGa1-xAs layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy
    Iida, S
    Balakrishnan, K
    Koyama, T
    Hayakawa, Y
    Kumagawa, M
    JOURNAL OF CRYSTAL GROWTH, 2000, 212 (3-4) : 601 - 604
  • [36] ON THE MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM-EPITAXY-GROWN INXGA1-XAS/GAAS SINGLE HETEROSTRUCTURES
    DRIGO, AV
    AYDINLI, A
    CARNERA, A
    GENOVA, F
    RIGO, C
    FERRARI, C
    FRANZOSI, P
    SALVIATI, G
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 1975 - 1983
  • [37] InxGa1-xAs/GaAs Quantum Rings Grown by Droplet Epitaxy
    Pankaow, Naraporn
    Panyakeow, Somsak
    Ratanathammaphan, Somchai
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [38] CARBON INCORPORATION IN GAAS AND ALXGA1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    GIANNINI, C
    GERARDI, C
    TAPFER, L
    FISCHER, A
    PLOOG, KH
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 77 - 81
  • [39] Carbon incorporation in GaAs and AlxGa1-xAs layers grown by molecular-beam epitaxy
    Giannini, C.
    Gerardi, C.
    Tapfer, L.
    Fischer, A.
    Ploog, K.H.
    Journal of Applied Physics, 1993, 74 (01):
  • [40] SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY
    GURYANOV, GM
    TSYRLIN, GE
    PETROV, VN
    SAMSONENKO, YB
    GUBANOV, VB
    POLYAKOV, NK
    GOLUBOK, AO
    TIPISEV, SY
    MUSIKHINA, EP
    SEMICONDUCTORS, 1995, 29 (09) : 854 - 857
12345