MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXGA1-XAS AND INXAL1-XAS ON SI SUBSTRATES

被引：1
|
作者：
FUKUNAGA, T
HASHIMOTO, A
WATANABE, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 07期
关键词：
D O I：
10.1143/JJAP.28.1276
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1276 / 1277
页数：2
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