ALUMINUM IN HYDROGENATED AMORPHOUS-GERMANIUM

被引：2
|
作者：
TESSLER, LR [1 ]
机构：
[1] UNICAMP,IFGW,DFA,BR-13081 CAMPINAS,SP,BRAZIL
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1993年 / 67卷 / 04期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1080/09500839308240939
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of aluminium on the electro-optical properties of high quality sputtered hydrogenated amorphous germanium are reported. Two distinct effects are found: at low concentrations, the aluminium atoms act as active p-type dopants making the Fermi level shift towards mid-gap compensating the intrinsically n-type material. At higher concentrations, a hydrogenated germanium-aluminium alloy is formed. The optical gap shrinks and transport is probably dominated by holes.
引用
收藏
页码：273 / 278
页数：6
相关论文
共 50 条
  • [31] BAND TAILS AND DEEP-DEFECT DENSITY OF STATES IN HYDROGENATED AMORPHOUS-GERMANIUM
    GODET, C
    BOUIZEM, Y
    CHAHED, L
    ELZAWAWI, I
    THEYE, ML
    MEAUDRE, M
    MEAUDRE, R
    BASROUR, S
    BRUYERE, JC
    [J]. PHYSICAL REVIEW B, 1991, 44 (11): : 5506 - 5509
  • [32] AC CONDUCTIVITY IN AMORPHOUS-GERMANIUM
    AGARWAL, SC
    GUHA, S
    NARASIMHAN, KL
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 18 (03) : 429 - 437
  • [33] CRYSTALLIZATION OF AMORPHOUS-GERMANIUM FILMS
    NAKHODKIN, NG
    BARDAMID, AF
    NOVOSELSKAYA, AI
    YAKIMOV, KI
    [J]. FIZIKA TVERDOGO TELA, 1987, 29 (03): : 715 - 720
  • [34] ELECTRON TUNNELING INTO AMORPHOUS-GERMANIUM
    OSMUN, JW
    [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5008 - 5022
  • [35] TUNNELING SYSTEMS IN AMORPHOUS-GERMANIUM
    GRAEBNER, JE
    ALLEN, LC
    [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (17) : 1566 - 1569
  • [36] DEFECT STATES IN AMORPHOUS-GERMANIUM
    ISHII, N
    KUMEDA, M
    SHIMIZU, T
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (01): : K65 - K68
  • [37] DC CONDUCTIVITY OF AMORPHOUS-GERMANIUM
    CAPEK, V
    KOC, S
    ZEMEK, J
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 18 (01) : 95 - 106
  • [38] STRUCTURE OF AMORPHOUS-GERMANIUM FILMS
    NAKHODKIN, NG
    NOVOSELSKAYA, AI
    BARDAMID, AF
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (11): : 1182 - 1188
  • [39] AC LOSS IN AMORPHOUS-GERMANIUM
    LONG, AR
    BALKAN, N
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 415 - 420
  • [40] CHLORINE IMPLANTATION INTO AMORPHOUS-GERMANIUM
    PREMACHANDRAN, V
    GUHA, S
    SHARMA, RP
    KURUP, MB
    [J]. THIN SOLID FILMS, 1982, 88 (04) : 335 - 338
12345