ELECTRON TUNNELING INTO AMORPHOUS-GERMANIUM

被引：15
|
作者：
OSMUN, JW [1 ]
机构：
[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637
来源：
PHYSICAL REVIEW B | 1975年 / 11卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.11.5008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5008 / 5022
页数：15
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