MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF 2-IN-DIAM HG1-XCDXTE FILMS ON GAAS (100) SUBSTRATES

被引：27
|
作者：
LANGE, MD
SIVANANTHAN, S
CHU, X
FAURIE, JP
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期
关键词：
D O I：
10.1063/1.99247
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：978 / 980
页数：3
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